Classic DRAM stacks up to four wafers on top of each other and then is packaged with BGAs. The manufacturer can check the DRAM chips independently.

Soldering the DRAM onto a PCB is such a reliable process that there is almost zero risk of defects and even if a defect occurs the damage is limited. If the DRAM is soldered onto a DIMM the risk of a defect on the non memory hardware is non-existent. If the DRAM is soldered straight onto an SBC or GPU, then the DRAM can be removed to save the precious SoC or GPU chips.

Meanwhile HBM is the ultimate nightmare scenario. You stack up to 16 DRAM wafers on top of each other. One defect and the whole stack is worthless and that was actually the easy part.

In stage two things get even worse. You now have your accelerator chip and you must place the HBM on that chip. E.g. Blackwell GB300 has eight HBM stacks and the accelerator chip has a bigger area than the HBM. You must get the packaging right eight times in a row or you have wasted not only the DRAM silicon, but also the accelerator silicon because HBM cannot be removed and defects are permanent.

The issue here isn't just the yield of the HBM (which is obviously lower if you have taller stacks) but rather the yield of the combined HBM-based product, which is why doesn't make sense to say it needs more area but it is completely correct to say that HBM leads to more silicon being consumed. Hence it doesn't make sense to talk about yield of the HBM itself, because it is always part of an integrated product.

You make HBM by stacking a whole bunch of dies on top of each other. The signals from the upper dies need to pass through vias in the lower dies to get out - taking up valuable die space in a way which simply isn't needed with regular DDR. Similarly, HBM has a far wider bus, so each individual die has, say, 16 banks of depth 32, rather than 4 banks of depth 128. That's more control area needed per byte of memory.

Those two combined already result in a huge reduction in bytes per mm2, so with the same wafer processing capacity you're producing far less byte of memory. Add to that a complicated chain of HBM-specific packaging steps, and you're now also losing a decent bunch of perfectly-fine dies because rather than putting it into DDR you tried making a HBM sandwich and screwed up.

Even if the memory cells are the same and have an absolutely identical yield, HBM will always end up having a significantly lower output. That's just the cost of stacking, but some people are willing to pay the per-gigabyte price penalty in return for the higher bandwidth.

> 2/3 produced is garbage.

This might not be far off the mark. You are irreversibly linking the fates of these devices after a certain stage of manufacturing. If something goes wrong at final packaging time, you lose all dies instead of one.

Yea, that's the question. Yield situation can improve. Area overhead would not improve short of a completely new and incompatible tech.

Yuck. Time to build an xSPI/HyperRAM workstation (if only these had multi-bank chips).