The AFM mechanism described as “tier 1” (very strong LLMism, btw) is somewhat optimistic but realistic. The fields needed are large compared to usual values in solid state devices, but I’d guess achievable with an AFM. But “tier 2” is vague and completely speculative. Some random things I noted: - handwaving that (not exact quote) “the read controller is cached. No need to read the same bit twice”. Cached with what?? If this miraculous technology can achieve 25 PB/s, what can possibly hope to cache it? More generally, it’s a strange thing to point out. - some magic and completely handwaved MEMS array that converts an 8um spot size laser beam into atomic-resolution 2D addressing? In my opinion this is the biggest sin of the manuscript. What I understood to be depicted is just fundamentally physically impossible. - a general misunderstanding of integrated electronics, and dishonest benchmarking, comparing real memory technologies being sold at scale right now, vs theoretical physical bounds on an untested idea. Also no mention of existing magnetic tape as far as I can tell. - constantly pulling out specific numbers or estimates with no citation and insufficient justification. Too many examples to even count.
I’m sorry for the harsh language, I wouldn’t use it for a usual review. But in my opinion this needs a very heavy toning down and complete rewrite, and is unfit for a proper review. Final remark: electronics is, and will always fundamentally be, intrinsically denser than optics. Some techniques “described” here, if they were possible, would have been applied to existing optical tech (i.e. phase change materials in blue-ray).