Not on modern high-frequency switchers.
GaN stuff can be 99%+ efficiency. The frequencies are multiple MHz which shrinks the inductors significantly--sometimes allowing PCB based coils (See Anker 120W teardowns).
GaN stuff can be 99%+ efficiency. The frequencies are multiple MHz which shrinks the inductors significantly--sometimes allowing PCB based coils (See Anker 120W teardowns).
Integer ratios can be done with GaN and class 1 ceramics and stray inductance to charge the GaN drain, so they only experience ZVS (they don't need ZCS). Use a resonant gate drive. Efficiencies around 99.8% are feasible for a doubler/halver based on the "3L FC buck" topology, in the 10~30 MHz range.
The datasheet mentions low profile a lot. That does make sense as one can make a flat, high quality, capacitor. Making a flat high quality inductor is harder and probably more expensive and likely consumes more volume overall. I can imagine some applications where being flat is important, like the back of a panel.