You are looking at wire bonded chips. Wire bonding is still used for chips in older process nodes and lower number of IO. This article says up to 800 IOs
https://semiengineering.com/wirebond-technology-rolls-on/
But all the high performance chips in leading edge process nodes like 3nm are flip chips. The last time I worked on a wire bond chip was in 130nm in 2004.
With a wire bond chip you can only have IO for signals and power/ground around the periphery. Some wire bond chips have 2 rings of IO pads but it makes the wire bond angles complicated. It's difficult to jump over other wire bonds to get closer to the center.
https://en.wikipedia.org/wiki/Flip_chip
Flip chips have a series of bumps above the top layer of the chip. These bumps are then connected to a small PCB inside a package or some other kind of interposer.
The transistors are on the bottom of the die and then up to 18 layers of metal are built on top. In a wire bond chip the heat has to go up through all that metal stackup which is usually encased in a glob top which isn't great for heat transfer.
https://www.gluespec.com/blog/glob-top-encapsulation
In contrast a flip chip has the die mounted upside with the top layer mounted to the PCB and the side with transistors is on top and can be directly mounted to a heat sink. Intel and AMD used to have bare die around 2000 but then mounted heat spreaders on top because sometimes people would mount the heat sink incorrectly and crack the corner of the die when tightening down non-uniformly.
http://mantravlsi.blogspot.com/2014/10/flip-chip-and-wire-bo...
With a flip chip we can have over 15,000 IO in the chip. The flip chip bumps can be all over the die not just the periphery. Not only can we put IO in the center but the density of the bumps can be much higher compared to the pad points where a wire bonder would attach.
As for your original question about some kind of continuous bar shaped contact we have a power grid underneath on every layer to distribute the power across the chip. This has to go from the top layer Metal18 down through vias to the transistors below Metal1.
Modern chips have multiple voltages in multiple voltage domains. The DDR and PCIE sections have their own voltage requirements. The standard cells that are the combination logic within a CPU operate on much lower voltages. We have dynamic voltage control where the voltage is lowered to save power. We have voltage islands where the USB port can be shut off if nothing is plugged in or CPU core 1 is active while cores 2-4 are off saving power. This requires dedicated power / ground bumps and head switches to disconnect power to sections of the chip.
I don't think we could manufacture your concept of a "bar shaped contact" because the process DRC (Design Rule Check) stuff is very rigid about what can be manufactured. Certain shapes, widths, and turns decrease the yield so they aren't allowed.
https://www.vlsi-expert.com/2014/12/design-rule-check.html