It's not a detail. It's a more complete picture. Both of your comments are different slices of the same pie.

I don't see anything written above that pertains specifically to any type of FET.

Your last paragraph is a new topic. It's true that Si can be as efficient as SiC and GaN, despite what the marketing usually says. But there are other benefits to new materials. They already support higher voltages with planar technology, and 3D will increase that further. Gate driving will get easier and more rugged.