The "Full procedure" of reading a DRAM cell is:
1. Row-Address -- Load a "row" (usually 1k to 8k. DDR4 is 8k IIRC) to the sense amplifiers. Sense-amplifiers can indefinitely hold data, but there's relatively few of them.
2. Column Address -- Once loaded, you talk to the sense-amplifiers.
3. Precharge -- You begin to move the data from the sense-amplifiers back to the DRAM cells. Again, step #1 obliterated the data, you have to write it back regardless.
4. Row-Address -- After the old data is loaded, you send it back.
So regardless, you have to Read-then-write EVERY time. In fact, DDR4 has faster write-speeds because you don't have to do the read step if you are only writing.
Intel doesn't publicly share the full specifications documents for their SSDs any more, just the 2-page product briefs. And the news article contains all the official information that's public so far about the Optane DIMMs.