Thanks for the elaboration. Is there also a layman's explanation for the what makes 13.5nm lasers harder to etch with than 193nm lasers?
As I understand it, the EUV light is produced by dropping little drops of tin in front of a laser, which turns it into a plasma that emits 13.5nm light. However, tin particles scatter everywhere and eventually damage the collector mirror, so it's hard to make these machines robust.
I also imagine with these high energies and 30% absorption, you have to cool all the mirrors to keep them from deforming, but I'm no expert.