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I've been wondering if EUV will bring things back in line. They say the light sources are not bright enough yet, but isn't doing a 2-4x exposure better than double or triple pattering? If the total time were the same you'd still have the benefit of the shorter wavelength allowing dramatically smaller features. What am I missing?

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It isn't 25% as bright as it needs to be - it's more like 1% or 0.1%. The total time isn't the same.

That is not true at all, wafer throughput is a factor 4-5 less... The mistake in the first comment is that with self aligned double patterning you only need one litho step, not two. The same applies for SQDP. And since litho is one of the most expensive steps double patterning is more cost effective.

From a technology point of view the problem with EUV is more the line edge roughness, line width roughness, defects and the reliability... Given, more light will make the job easier

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