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Comment by minthd | Hacker News Reader

A guess: this uses memristors(i.e. rram).

crossbar is a startup in the field, their site gives plenty of details about the tech.

No, this is not memristors (unless you consider PCM to be a memristor) and it has no relation to crossbar-inc.com. This is phase change memory.

https://www.google.com/search?q=site%3Amicron.com+%22cross-p...

I think this is not the memristor thing. I remember memristor-related posts in Slashdot (2008 [1], 2012 [2]), but the ones related to Intel + Micron (2014 [3], 2015 [4]) tell about "3D nand", which may be just NAND-flash using multiple layers with 3D interconnect. However, the speed and density claims make doubt if in reality this is or not the same as the memristor.

[1] http://hardware.slashdot.org/story/08/04/30/211228/memristor... [2] http://hardware.slashdot.org/story/12/07/25/2127229/the-hp-m... [3] http://hardware.slashdot.org/story/14/11/25/2027220/how-inte... [4] http://hardware.slashdot.org/story/15/03/26/2037221/micron-a...

RRAM was there first, and it will previal.

Lets just forget about this "memristor" PR-nonesense. HP did as well. (Their activities seem to be dead)

Do memristors read or write based on the applied voltage? I noticed that in some of the intel marketing material.

How else would you do read/write?

I'm not familiar with the physics of memristors or storage in general. I was wondering if a single line is used to read and write, increasing the voltage on write to change the state.

Apparently a few different things have been called "memristors", but at least some of them have a resistance that depends upon the integral of current through them into the infinite past. DC current one way to write a 1, the other way to write a 0, and AC current to nondestructively read, I guess. Typically this works through ion migration in the material, and I suspect that resulted in abysmal endurance, putting an end to the promise of memristors.

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