Yes. When scaling down semiconductors your oxide shows weird behavior. In transistors this was one of the crisis that hindered miniaturisation, there were alternatives (like exotic high-k dielectrics) but semi corps tend to steer away from such things.

Miniaturization happens not only on the surface (length and width) but also depth. This is where silicon oxides come into play. Flash tech relies either on charge trapping in the oxide itself or in a floating gate. Both become sensitive to effects like tunneling when you scale them down in the 10nm magnitude.