DDR4 memory: Twice the speed, less power
theregister.co.uk
theregister.co.uk
Obviously the width of the DRAM bus itself is a parallelism design: fundamentally DRAM is always "one bit wide", you get wider busses by using multiple devices and feeding them the same commands.
And you can get even more parallelism by using more than one DRAM channel. Intel Desktop CPUs have 2x 64 bit channels, the LGA2011 server parts have 4x64, Apple's new A6 made news this week by moving to a 2x32 bit design.
But note that those are all bandwidth improvements. They don't do anything to the time it takes to get a bit out of an idle DRAM part. DRAM latency is largely fixed in the modern world, until we find a different way of storing bits.
http://semiaccurate.com/2012/09/07/intel-to-do-away-with-dra...
Memristors are weird. Depending on the material you use to make it, the mechanisms behind the memristance change. For instance, in some materials you create and destroy nano-wires at the interface of metal-insulator that allow electrons to tunnel through the thin insulator.
With other materials (such as TiO2 memristors), the materials undergo phase transitions that change from conducting to non-conducting depending on the applied voltage.
There's probably others that we haven't found yet. The TaO2 memristors are FAST.
They can last a really long time as well - people have recorded 10^10 open loop write cycles for memristors.
Most things sound too good to be true, but memristors scale incredibly well (they are created in a cross bar pattern, like core memory back in the day) so you can make them extremely dense. They also hold their state when the power goes out, they are quick, and they last for a long time. I can see a convergence of the memory we use in computers, as once they catch on, they will bring inexpensive, plentiful, fast memory.
Cache locality and streaming reads and writes are still as important as ever.