ASML machines are hitting tin droplets with 25kW laser 50,000 times a second to turn them into plasma to create the necessary extreme ultraviolet light, and despite generating 500W of EUV, only a small fraction can reach the wafer, due to loses along the way. I believe it was like 10%.
Here’s an incredible, very detailed video about it: https://youtu.be/B2482h_TNwg
Maybe the high water usage is at some other stage? Or intermediate preceding stages? I'd love to understand more end-to-end, as surely it isn't as easy as popping a wafer in a semi-truck trailer sized lithography machine.
One thing to understand is that you’re seeing an accumulation of over 50 years of incredible engineering and cutting edge science, these things were invented incrementally.
One thing I am curious about - how many generations of process shrink is one of these machines good for? They talk about regular EUV and then High-NA EUV for finer processes, but presumably each machine works for multiple generations of process shrink? If so, what needs to be adjusted to move to a finer generation of lithography and how is it done? Does ASML come in and upgrade the machine for the next process generation, or does it come out of the box already able to deliver to a resolution a few steps beyond the current state of the art?
Even the video about zippers was fascinating.