Proper decoupling capacitor practices, and why you should leave 100nF behind
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Don't go to a larger package to get more capacitance, though. Capacitors that are physically larger will have worse higher frequency performance. The physical package is part of the limiting factor. Very high speed designs will prefer 0201 capacitors.
Also keep in mind the distribution of your decoupling capacitors. Putting a single 2.2uF in a board in place of multiple 100nF caps distributed around the PCB would be a mistake. The decoupling capacitor needs to be physically close to what you're trying to decouple.
For hobby projects and microcontrollers most of this just doesn't matter. Pick a capacitor and put it on the board. For real high speed work you have to consider the layout. Number, size, and location of vias around the capacitor has a big impact. Loop area is also a big factor. Don't use narrow traces or locate capacitors far away.
(Maybe it’s a good secret level in that Zachtronics game about nondeterministic infinitesimals portrayed as getting things done in a corporate environment;… what was the name of that one again?)
How many circuits cannot afford 100us of softstart?
I guess to your point though: 100uF of capacitance (because of a lot of 10uF caps) to 3.3V requires a 3.3Amp softstart over those 100us startup time. So you still can't go crazy spammy.
While 100x 100 nF caps is only 10uF all together.
Apparently most EE's don't do this.. I've seen decoupling caps in designs that basically do nothing.
I'm now very careful to pick ceramic capacitors with enough headroom on their rated voltage as you lose a lot if you're close to the rated value. This curve is dependent on the different ceramic types as well (C0G, X7R, etc). Cheaper ceramics have a steeper rolloff.
For personal projects I am very careful to pick higher quality ceramics (X7R if I can) and use caps rated to 2-3x my operating voltage. Likely overkill, but I'm not optimizing for cost at volume.
[0] https://resources.altium.com/p/voltage-derating-ceramic-capa...
If you don't believe me, poke around a bit in SimSurfing or similar. You should also notice that most capacitors are actually binned by voltage rating these days: a 16V part and a 50V part might be identically specified, but one's curves just cut off at 16V. I don't know if that's strictly binning or just testing, but it's pretty clear they're the same parts under the hood.
This statement used to be false (I used to design boards where I would bump the voltage rating to get better DC bias behavior), but it looks like the engineering behind these capacitors has changed "recently" (as in the last 10 years), and it is now mostly true.
Looking at Murata caps, for example:
1.0uF--uniformly 50% derating from 6-16V:
https://www.murata.com/en-us/products/productdetail?partno=G...
https://www.murata.com/en-us/products/productdetail?partno=G...
https://www.murata.com/en-us/products/productdetail?partno=G...
100nf--uniformly 2% derating from 6-16V:
https://www.murata.com/en-us/products/productdetail?partno=G...
https://www.murata.com/en-us/products/productdetail?partno=G...
https://www.murata.com/en-us/products/productdetail?partno=G...
Interesting. TIL.
Thanks for pointing that out.
Parts with different codes can have vastly different behavior under DC bias. You'll find that one of them is the clear winner in most cases. Unfortunately, Murata knows this too, and that one is invariably more expensive in distribution.
But at least you can specify it!
Other vendors do this too, but it's easiest to see with Murata's setup and tools.
In particular adding capacitance in random places or seat-of-the-pants-ing a layout is not helpful.
Peak currents are very much a thing! for anything powered by battery or over USB. When you connect your USB gadget, you don't want it to exceed the USB spec and fry your USB port (or USB hub). That means there is a limit to how much in total capacitance your USB gadget can have before the power surge of connecting its cable becomes an issue. And that means you usually need to use the smallest caps that are OK to do the job. You typically need to use multiple decoupling caps all over the board, so using one that is too large very quickly adds up. That's how you end up using 100nF instead of 1uF.
Also, the article complains that 100nF caps have their filtering peak at the wrong frequency, but I'd argue that 20MHz to 40MHz is exactly in line with the rise and fall times of modern ICs, meaning that 100nF caps would even work better than 1uF for those ICs. As an example, look at the PCM5242 datasheet which suggests 100nF caps and their switching times are in the 16ns to 20ns range. Looking at the "impedance plot" in the original article, that means the red line is most suitable ... which is the 100nF 0402 capacitor.
The article would be correct if you are working on things using old (slow) ICs and a dedicated power supply. But if you're working on USB power with modern ICs, I believe going from 100nF to 1uF is a step in the wrong direction.
"If you have a lot of devices powered off a single rail, placing lots of high-value decoupling capacitors will add up, so pay attention to inrush current. If you’re sticking 10uF decoupling caps on 20 devices then that’s 200uF. Maybe dial it back a smidge."
So if I was following the advice in the article, that would be 43uF of total capacitance just for a small CPU and headphone sound output. At about 10uF at 5V, you're running into issues with the USB spec. (When not using power delivery negotiation, which necessitates additional components and beefy MOSFETs)
So while the article mentions that too much capacitance can be an issue, following the advice in the article will pretty much make sure you run into exactly that issue.
The article does get it right that you need to reduce the parasitic elements to the chip, but you have to consider like, everything - not just the wires to the package, but also the lead frame, bond wires, the wiring in the chip. Usually the chip designers modeled that all out and they put decoupling capacitors on chip and did PCB model simulations that includes some specific assumption about the impedance curves of the off-chip caps, and they probably used 0.1uF in their simulations.
If anything, you need closely placed decaps to prop up higher frequencies, not lower frequencies. Remember if you have a SPI bus clocking at 25MHz, 25MHz is just the fundamental - you have the whole fourier series going up to 100's of MHz on the edge.
The answer I had always seen looking at the chip models is that there is an off-chip capacitance value below which it does not make sense to use because the bond wires effectively isolate the chip above certain frequencies (i.e., while smaller value capacitors have higher SRF it doesn't matter because the chip can't "see" the capacitor due to the bond wires screening it out).
If you knew where that roll-off was, and you knew the curve of your capacitors + board parasitics, you'd place a cap as close as you can to the chip in the frequency band right below the roll off of the bond wires to prop up that zone. Then, you'd place larger caps farther away because, as the article notes, the inductance goes up but also you're just looking to prop up the higher impedance-at-lower-frequencies curve of the tiny cap that's close to the chip.
So a lot of it depends on the exact chip you're working with and how well designed it is. A classic chip design team would have an expert who did all the parasitic modeling of the package, board, and then they'd do a noise analysis on the chip and recommend a minimum on-chip decap so the board designers don't have to worry too much, they can get away with "almost anything" in the 0.1uF range. Unfortunately chip design teams are getting leaner and leaner these days and I don't see the same level of care being put into chips. I think we more or less get away with it because there is so much margin in the chip timing; also modern chips are "mostly" (>50%) fill cells -- e.g. decoupling capacitors -- that are placed right up against the logic gates so you can get away with bloody murder on the package and power distribution networks (background: modern chips are wiring-limited, not transistor-limited, but for process stability reasons you still need to make transistors everywhere at a uniform density, so they instantiate dummy transistors that are wired as capacitors between power and ground).
Where it really starts to matter is if you had e.g. a PLL and you're trying to reduce noise that the loop filter can't get rid of and in those cases often times you need much smaller capacitors because they have much better performance at higher frequencies. Yes, they suck at low frequencies - but your noise problem isn't in the 1MHz band anyways; the loop filter can track that out. It's going to be in the 100MHz+ range.
And as someone noted elsewhere, in-rush current is a real problem, and too much capacitance can cause a problem for regulator stability; especially the extremely high performance ceramics. And, if you're doing an extremely power efficient design you may need to consider factors like leakage and losses due to CV-energy cycling if you shut down significant portions of the design when not in use.
(edits for clarity)
Looking at the left diagram under the "Decoupling capacitor placement" headline here:
https://jmw.name/projects/exploring-pdns/
... it is very obvious that the cap being 1cm away will already cause much worse degradation than what going from 100nF to 1uF could ever improve.
Many modern chips have multiple power input pins. Using smaller caps close to all of them will do much better than fewer bigger better caps, but with more distance.
The article also doesn't do a particularly good job of making the argument against relying on the "notch" (seen here at 25–40MHz), which is that the notch moves. It moves around with just about any change in... anything... so you can either pay the heavy price to genuinely control it (it can be actually worthwhile to drop a notch on things in certain analog applications; think knocking out a DAC clock frequency in a reconstruction filter) or you can ignore that the notch exists. Usually that's the easier option!
That's the point of the article, though. 1uF caps are now available in package sizes smaller than 100nF caps were when the rule of thumb originated. You can get a 16V rates uF cap in 0201 nowadays, so proximity really isn't a problem.
I second the general rule of thumb: stacking decoupling capacitors is extremely rarely needed nowadays. Pick your size, put the largest capacitor you can get in that size (or, if you're paranoid and think the manufacturers might be pushing things, go one size smaller) as close to the chip as you can, and maybe assess if you need some bulk capacitance as well, but more likely you are liable to wind up with too much capacitance.
Remember also that most bulk capacitor types bring in some ESR, and the associated damping can really help a PDN. If you're too lazy to simulate, at least leave a footprint for a tantalum or aluminum capacitor!
USB-C sorta solves this because it starts at 5 V and steps up after being plugged in, but then you have issues with arcing on unplugging (see: USB-C connector spec, one of the last appendices deals with this).
> 1. If you have a lot of devices powered off a single rail, placing lots of high-value decoupling capacitors will add up, so pay attention to inrush current. If you’re sticking 10uF decoupling caps on 20 devices then that’s 200uF. Maybe dial it back a smidge.
The conclusion of the article specifically mentions inrush concerns as one of the reasons to use large values. For the notch itself, relying on the difference between 0.05 Ohm and 0.02 Ohm decoupling is gonna make for a bad time, especially given how much that notch will move across DC bias and temperature.
Those 10uF/100V/X7R/1210 capacitors you love for your space constrained designs might only be 1uF at 48V. And it gets worse when choosing smaller package sizes.
This caught me completely off-guard. I've always thought an MLCC with a reasonable Dielectric at a given Capacitance would perform at least as well as an Electrolytic or Tantalum (minus fire hazards).
[1] (PDF) https://www.digikey.com/Site/Global/Layouts/DownloadPdf.ashx...
Extreme parts cost a whole lot more
Screenshot: https://i.imgur.com/sMaXBpN.png
If you really need to be on the lowest column (highest capacitance) for a given voltage rating, you'll either pay for it in voltage derating, temperature performance, tolerance accuracy, package height, or just pay for it in literal cash.
You cannot go below the lowest column, they have not figured out how to build a 10uF/25V/X7R/0603 MLCC, that is just not a thing you can buy.
With a given dielectric, material properties science only go so far. You're leaving performance on the table if you select a given package size with less capacitance and a lower voltage rating than what's available. (Assuming decoupling, not analog stuff where you need exactly 438.6 pF for a particular resonant frequency or something). Each package size has basically a constant inductance, and usually, capacitor height isn't that critical - you don't want to be oversquare, but they don't sell many of those. Each manufacturer publishes a waterfall diagram, but all manufacturers are working with the same physics.
Conversely, if you've selected an X7R dielectric and an 0603 package for a decoupling capacitor, there's not a great reason to go with a 0.1uF value, or to restrict yourself to 6.3V rating - eg [2]. They make a 0.47 uF 25V capacitor that's otherwise identical! [3] And because designers are lazy and default to 100nF, the part with 1/5th the performance is literally 6% more expensive!
Note that for 0402 packages, the 100nF capacitor is typically the right part to select! You can't get a 120nF/X7R/0402 at any voltage rating above 6.3V, the 220nF and 470nF are exotic parts that sacrifice stability and accuracy for maximum capacitance in a volume, but a 100nF/16V/X7R/0402 is a pretty good default.
[1] https://content.kemet.com/datasheets/KEM_C1002_X7R_SMD.pdf
[2] https://www.digikey.com/en/products/detail/kemet/C0603C104K9...
[3] https://www.digikey.com/en/products/detail/kemet/C0603C474K4...
The cheap option was an electrolytic cap and a .1 uF disc ceramic. The self inductance of a wound aluminum capacitor tended to be ok at 120 hz hum frequency but horrible at higher frequencies found in TTL and CMOS logic.
Those also turned out to self destruct over time due to the extensive use of an incomplete stolen trade secret electrolyte formula in many low cost capacitors.
I'd still use both, personally.
Switching regulator frequencies have become much higher since the 80s. It's common to have switching regulators operating in the MHz range with small ceramic output capacitors and relatively low value inductors.
You might find a configuration like that in some old retro computing gear, but a modern 1uF ceramic chip capacitor will outperform a 0.1uF tantalum significantly. You don't need to use an electrolytic for 47uF. You can get 47uF in one or two surface mount ceramic caps.
Most of the repairs I do are to older test equipment and radios, from WWII to the end of the 20th century. Some of the new surface mount stuff is just too small for us to work with. 6TTSOP is a chip 2 by 1.25 mm, and it's really hard to tack leads onto it to patch it into an existing circuit. (We needed 20+ dB of gain at 2 Ghz to replace an obsolete part, we ended up ordering a MAR-6+ instead, at least it's big enough to solder)
This is simply not true.
That Samsung cap he quoted is about 1 or 2 cents in volume from Digikey or Mouser. That cheap Chinese quote means that they are probably substituting inferior parts.
By contrast, the 0.1uF(100nF) in the same size is at least an order of magnitude cheaper. This matters a lot as you can wind up with a lot of bypass caps on your board (a significant percentage of 100 isn't uncommon). In addition, you can get 10V rating instead of 6V which means that you don't have to worry about USB transients destroying your cap and you get much better bias derating.
However, this article has a kind of fundamental misunderstanding:
"Bypass" caps (mostly) aren't about charge storage.
The point of a "bypass" cap is to provide a return path for high frequency signals--the "bypass".
All electrical signals require a circuit--that's a full loop. That loop goes positive power supply->chip A power->chip A out->chip B in->chip B gnd->negative power supply.
In the case of slow signals, it is fine for that loop to be that big. The problem is that as the signal speed increases, the resistance/capacitance/inductance of that loop the whole way back to the power supply gets bigger and bigger and starts slowing everything down.
You use your bypass capacitor so that the loop looks like chip A bypass (positive)->chip A power->chip A out->chip B in->chip B gnd->chip A bypass (negative). That loop is a LOT smaller than going the whole way back to the power supply. Which means that you want your capacitor to look a whole lot like a short circuit at the frequencies of interest, which 0.1uF(100nF) does.
In fact, given how much faster signals are nowadays, you probably want to use 10nF bypass caps, but that's an argument for another day.
As for RF bypassing, you almost always have to go to small value 0402 and 0201 in values like 100pF or lower, anyway. So, this discussion is mostly moot for RF.
Yes, if I have to use a ceramic 1uF capacitor for some other reason already, I won't sweat the idea of it serving as a bypass capacitor. But I'm certainly not going to upvalue all my nice, cheap 100nF bypasses.
No, they aren't. LCSC is a very reputable distributor that has lower margins by having much cheaper labor and having absolutely insane economies of scale.
The main reason MLCC are so popular... is the price. =3
I don't suppose you ever did the measurement with big-V decoupling, and with and without the big electrolytic? That would have been really interesting.
But most importantly, as the author ends, I will probably continue lowering my mental overhead and put in 1uF or 2.2uF capacitors as my decoupling caps from now
Just after I typed the above, I see Intel has such a patent filed in 2001 (https://patents.google.com/patent/US20050156280A1/en). So maybe that patent has prevented other companies from adopting such a practice. (Having decoupling capacitors already in the package would sure make hobbyist pcb designing much easier, cause it is so hard to deal with tiny SMD parts.)
Every production board will have capacitors in other places, so removing one of them at the expense of increasing chip size and PCB area isn't a good trade.
For high density designs with high budgets, you can embed capacitors and other passives directly into the circuit board in cutouts. You can also use special capacitance layer substrates to form a big distributed capacitor between two copper planes in the PCB.
There are a lot of options out there, it just doesn't make sense in most cases because putting a capacitor that costs less than $0.01 around the chip is trivial.
Having designed FPGA boards with both their 7th generation parts and their Zynq UltraScale parts, the internal capacitors are such a time and cost saver in terms of being able to fan out more signals without more PCB layers
I can also attest that even relatively "slow" chips like 14 nm FinFET MPUs from Renesas have decoupling caps on the substrate
I'm looking at the newest versal chips from Xilinx/AMD for a new design and buying a SoM & designing our carrier board could fit the bill nicely. We're still very early in the design process, we need to get prices for the chips too to see if it's an idea worth pursuing.
typo here "if you have a 1Hz clock signal with a 350ps rise time"
This line is great: “I see these practices recommended in vendor’s datasheets all the time! Surely they can’t be wrong? They’re professionals!”. Yup, I've seen some pretty whacky serving suggestions that obviously nobody ever actually tried building.
I would add, this is why we prototype, even if you have great simulation. A few times I've hand populated a digital board starting with ICs and found it works perfectly without any of the Cs other than about 10uF on the main rails. Then add a few in as required as the frequency ramps up. Finally remove all the through-hole drills or SM pads for components you didn't actually need.
Another point not raised is that every C you can get rid of ups the MTBF of the board, since caps go bad and are temperature sensitive and one bad C can bring down an entire circuit.
>The 100nF value for decoupling became so entrenched because it works well enough* most of the time, so you don’t need to even think about it. By eliminating trivialities you can focus your brain-juices, spoons, or whatever else you want to call them on more challenging tasks.
So the argument in this article is that we should ignore this triviality and spend more time precisely tuning decoupling capacitor selection on top of designing the rest of the system?
Software people would call this premature optimisation, no?
Real components, every component, including the PCB, are not anywhere close to what EE's are generally taught in school. The the physics equivalent to starting a problem with "assume a cow is a uniform sphere of mild one meter in diameter".
The basic answer is basically what the original article says. If you don't want the mental burden of figuring it out, the spec gives you safe defaults that should work for almost all uses. But it's almost never the case that you need to do it that way.
https://www.kyocera-avx.com/docs/techinfo/CeramicCapacitors/... by Kyocera AVX
https://product.tdk.com/en/techlibrary/solutionguide/3tf03.h... by TDK
tl;dr: ESL is dominated by packaging inductance so the geometry of the capacitor matters a lot more than the value
3 terminal capacitors are the cheapest "low inductance" capacitor that have a meaningfully better ESL. If you need better than that you should use an EM field solver to properly understand PDN impedance.
Seems to be targeted at a different audience than the article.
Interesting article with lot of good points. However, without an EMC radiated emmissions test, the rant is useless. Especially when it resorts to "monkeys".
If you don't really read it, YMMV.