I believe what you are referring to is called the Bandgap problem.
Good explanation on the issue is here:
https://www.allaboutcircuits.com/technical-articles/graphene...
Convenience quote of relevant section:
> Lack of Bandgap
Despite being a fast and efficient transistor, the GFET does not have a bandgap. The gapless structure means that the valence and conduction bands meet at zero volts, hence making graphene to behave like a metal. In semiconductor materials such as silicon, the two bands are separated by a gap which behaves like an insulator under normal conditions.
Usually, the electrons require some additional energy to jump from the valence band to the conduction band. In FETs, a bias voltage enables a current to flow through the band which acts as an insulator in the absence of the bias.
Unfortunately, the absence of a band gap in GFET makes it hard to turn off the transistor since it cannot behave as an insulator. The inability to completely switch it off results in an on/off current ratio of about 5, which is quite low for logic operations. Consequently, using GFETs in digital circuits is a challenge. However, this is not a problem with analog circuits hence making the GFET suitable for amplifiers, mixed-signal circuits, and other analog applications.
Multiple parties are researching ways to address these bandgap challenges, including techniques such as the negative resistance approach and the bottom-up synthesis technique of fabrication.