Canon Nanoimprint lithography semiconductor manufacturing system (5nm)
global.canon
global.canon
This uses e-beams to make the mask, right? Edit: here's their research paper (7 years old but note the identical model name FPA-1200NZ2C):
http://cnt.canon.com/wp-content/uploads/2016/08/Nanoimprint-...
Turns out they e-beam a "master mask" and then use that as an imprint to create "replica masks". Then the "replica masks" imprint the wafers. Sadly you still have to start with a crazy-expensive e-beam mask.
E-beam systems work fine, but the write times are in tens of hours.[2]
[1] https://en.wikipedia.org/wiki/Nanoimprint_lithography
[2] https://www.ebeam.org/docs/eBeam-Mask-Maker-Survey-2020.pdf
Etching a wafer is only one step in the process, how do they deposit the metal layer? With lithography you have the resist that can be washed away after deposition.
Deposition is usually the same -- CVD.
Note that the stamp is applied to the resist:
> the new product does it by pressing a mask imprinted with the circuit pattern on the resist on the wafer like a stamp
Do they get high yields with this technique?
Is there a manufacturing process which can produce features that small, and is cheap enough for producing masks, but not cost effective for the quantities of producing final product?
Good to see they haven't given up in their competition with ASML.
https://en.wikipedia.org/wiki/Electron-beam_lithography
It can easily make small features, the only issue is low throughput, insufficient for mass production. But it's widely used to make masks.
(however, "5nm" in this case means nothing)
The mirror system used to project EUV might be able to do a reduction of the mask image by a small factor, but even so, the size of the features on the mask is too small to allow the production of the masks by photolithography.
As another poster has said, since many years ago the masks are produced by electron-beam lithography, even for traditional UV photolithography.
Electron-beam lithography and ion-beam lithography allow the production of chips with features as small as they can ever be possible (due to atom size constraints), but they make the images too slowly for mass production (because the beam scans sequentially the surface of the wafer), so they can be used only for making masks or for making devices used in research projects, where the cost per device does not matter.
A sufficiently defect free EUV mask can be worth >>1E6$, for a nano imprint template this would be much much more and it's lifetime probably a fraction. That's why nanoimprint litho is no alternative to EUV.
Edit - thanks for the answers - and yes it would make more sense for ASML to be worried, and TSMC to be happy to not have to use/power/maintain machine that shoot nano-drops of tin with lasers: https://www.trumpf.com/en_US/solutions/applications/euv-lith...
If it makes sense for them, TSMC could buy it and use it to keep doing what they’re doing.
The key point is that it’s equipment used to manufacture semiconductor devices, and Canon would be competing with ASML rather than TSMC.
Last time I heard about this tech (~8 years ago, when it was nowhere near commercial availability) that was the obstacle. Since the mask comes into physical contact with each wafer there is unavoidable wear on the mask with each wafer (actually with each chip). So the mask life is a certain number of chips; then you have to make a new one.
In addition, isn't the cost of a mask in it's design, not it's production?
They tend to be in the same ballpark.
There's a feedback effect: if the maskset gets cheaper you can afford to do shorter product cycles (think "iphone 15.5"), now you've got two masksets each with half the engineer-years devoted to it. This lets you be a bit bolder with the design since the cost of screwing up is lower. If masks get super-expensive then you only do one maskset and you throw more design-hours into making damn sure it's correct, and spend more time adding in "chicken bits" -- ways to turn off features that you screwed up, without ruining the whole chip -- and fallback options or insurance-policy type stuff. So the design cycle will lengthen or shorten if the engineering cost is several times larger or several times smaller than the mask cost. They sort of balance out.
Also the design cost is often impossible to define exactly. Blocks from previous designs get reused, so you can't really "charge" the effort it took to design them to just one chip. All the major design houses write a lot their own CAD tools too, and these tools have decade-or-longer lifetimes.
This could been handled by careful selection of parameters - solution concentration, temperature, pressure, mechanical mixing, etc, but on each step of feature size, it become harder to achieve.
I have first education electronics engineer, and I seen broken PCBs, where these artifacts seen by naked eye.
a) Too high a defect density
b) Too poor alignment between layers
to directly replace EUV
Because of EUV's insane cost / complexity, many older litho techniques (NIL, Direct Self Assembly) are making a comeback...NIL is a great option for lower cost patterning applications, like optical/photonic components (Magic Leap etc)
Register
https://news.ycombinator.com/item?id=37876581
CNBC
Wild stuff.
[0] - https://www.sandiegouniontribune.com/business/technology/sdu...