> Is it even possible for RAM to get much, much better than it is currently?
DRAM currently consists of a small capacitor per bit (cell), which can hold a small amount of charge (1) or not (0). The amount of charge it can hold, its capacitance, depends on the area and the distance between the conductors[1].
So, as you try to cram more cells into the same area, the amount of capacitance goes down. This is problematic because of leakage[2], causing the charge to leave the capacitor. This is why DRAM cells are refreshed periodically, hence the "dynamic" in DRAM. Too much leakage, and you spend all the time refreshing rather than accessing the memory.
To raise the capacitance back up, you can move the conductors closer. However, if the insulating material stays the same, this will lead to increased leakage. Thus a better insulating material is needed.
While the current DRAM cells are quite impressive, it seems they're starting to hit fundamental road blocks with the current technology[3]. There's a limit to just how little amount of charge a cell can hold and still be reliably read, and finding better insulators is getting harder and harder.
It may well be a new approach is the solution to continued scaling. Moving away from individual capacitors as the basis for a memory cell might be a way forward[4].
[1]: https://en.wikipedia.org/wiki/Capacitance#Capacitors
[2]: https://en.wikipedia.org/wiki/Leakage_(electronics)#In_capac...
[3]: https://www.techinsights.com/blog/dram-scaling-trend-and-bey...
[4]: https://spectrum.ieee.org/new-type-of-dram-could-accelerate-...