ASML looking to finally get ahead of Moore’s Law

Wish I could upvote tenfold to further increase your customer focus on operator excellence.

Can recommend [1] as the title say about the light source. Very interesting even for a non professional (and [2] as on high level overview of the machine and [3] as longer documentation inside ASML).

[1] https://www.youtube.com/watch?v=5Ge2RcvDlgw "The Extreme Engineering of ASML’s EUV Light Source"

[2] https://www.youtube.com/watch?v=f0gMdGrVteI "The Extreme Physics Pushing Moore’s Law to the Next Level"

[3] https://www.youtube.com/watch?v=zQu_TMgHO98 "ASML's Secret: An exclusive view from inside the global semiconductor giant"

https://en.wikipedia.org/wiki/Plasma_acceleration#Wakefield_...

I assume both depts in any company don't understand payroll, I don't think that would give anyone cause for concern about actually getting paid.

There's a reason why people specialise. The fact that one dept doesn't understand the work of another dept isn't a surprise.

Another option would be to not go 100x faster but to go 10x faster and then take the improved cooling + energy usage as a win.

The silicon atoms do not behave like spheres, only the atoms from many metallic or ionic substances have a behavior close to that of spheres. So it makes no sense to speak about a length "across" a silicon atom.

In the case of silicon, a meaningful number is that there are around 50 silicon atoms per cubic nanometer of silicon crystal.

The gate of a transistor (which is the active part of the transistor, and which has a much smaller volume than the complete transistor) in the latest 5-nm technologies is contained in a fin that might have a width around 5 nm, a length around 20 nm and a height around 50 nm, for a volume around 5000 cubic namometers (it is a complete coincidence that the width of a fin might be around 5 nm to 6 nm for a process named as "5 nm"; there is no relationship between the name of the process and the width of the fin; fins did not even exist for processes with names greater than "22 nm"). Such a gate of the smallest transistor might include around 250 thousand Si atoms. The volume of the complete transistor would be at least 10 to 20 times greater.

However the size of a transistor is not limited by the number of silicon atoms in the gate, but by the number of impurity atoms that control the conductivity of the silicon, and those are much less than the silicon atoms (I have not seen any number for the latest technologies, but they could be e.g. 10 thousand times less than the silicon atoms, so there might be less than 100 impurity atoms in the gate).

The result is that a 2nm process transistors is on the order of 10s of millions of atoms.

Source: I work with the latest nodes.

Here's a Fermi estimate: the M1 is ~16 billion transistors; assume it is 1 cm^2. That gives (10^7)^2 nm^2 / 10^10 transistors, which is ~10^4 nm^2/transistor. Assume the transistor is ~50nm high, which gives ~5x10^5 nm^3/transistor. There are ~100 SI atoms/nm^3, which gives a volume of ~5x10^7 SI/transistor.