Memristor cell scaled down to 10nm

HP is still accumulating endurance cycle data at 10^12 cycles and the retention times are measured in years, he said. For all the people worried about the Semiaccurate article talking about only a billion read/write cycles, this shows that endurance is a very tuneable parameter, just like it is with flash memory. With flash you have some cells that are only good for 5K writes, and you have some that are good for 1M writes. With RRAM it looks like the numbers will be much higher.