> In fact, they invented a new part that has the "input" gate of an FET and the Collector-Emitter "output" of a BJT!

IGBTs are far from being a new invention.

And if we are speaking strictly, very high currents aren't switched with higher net efficiency by BJT than FET.

The reason SCR type devices are used for the kiloamperes range switches is due to them being the only switches which can mechanically/thermally handle so much current.

But for high voltages, bipolars will indeed go higher than FETs.