> The foundation of the chip is nanosheet technology in which each transistor is made up of three stacked horizontal sheets of silicon, each only a few nanometers thick and completely surrounded by a gate. Nanosheet technology is poised to replace so-called FinFet technology named for the fin-like ridges of current-carrying silicon that project from the chip’s surface. The life expectancy of FinFet has been more or less set at the 7-nm node. If it were to go any smaller, transistors would become difficult to switch off: Electrons would leak out, even with the three-sided gates.