TSMC to Mass Produce Breakthrough 2nm Mbcfet Transistors in 2024
wccftech.com
wccftech.com
That number has nearly zero bearing on the actual physical sizes of the chip's components.
The only people who know about the exact dimensions are the firms placing manufacturing contracts with TSMC.
AFAIK the reason behind this madness is that the number previously did correspond to feature size, but then they discovered methods of increasing transistor density without decreasing the size of the components. Since the feature size was used in marketing as a proxy for transistor density, they felt it was ultimately justified to decrease the number. After all, if your enhanced 32nm process provided the same transistor density as your competitor's 22nm process, why shouldn't you market your process as "22nm"?
https://www.electronics-tutorial.net/Digital-CMOS-Design/CMO...
I don't actually know anything about chip production. But that's what I've picked up from HN.
The knife does get better, it's just not something that the Xnm node names measure directly.
Also, well, that number isn't really the actual resolution of the finest layer, but is some "marketing processed" message that should give you an idea of the chips performance. It used to have the meaning you stated, but things changed a while ago.
The most important dimensions are the gate pitch and metal pitch. For TSMC's 7nm process they are something like 60 and 40 nm and go down in the future to something like 30 nm and 20 nm in the 2nm process. Fin width might be the closest thing to commercial name.
They are not even comparable across companies. For example, TSMC 7nm process technology has 91 MTr/mm², Intel's 10 nm prosess technology has 100 MTr/mm². Samsung 10nm has 52 MTr/mm². (MTr/mm² refers to millions of transistors per mm²).
The only hobbyist that I am aware of used a pretty nifty mask less technique but the resolution doesn't come close at all. I think you just mixed up your units.
EDIT: looks like 173M for 5nm. https://en.m.wikipedia.org/wiki/5_nm_process
Intel 7nm is something like 200 MTr/mm2.
It's right that power has severely limited performance despite increasing the transistor density lately. Maybe we'll once again get better with adiabatic computing?
If you will forgive the expression. Yes and No.
Yes in that TSMC has ideas / plans scaling all the way to 0.8nm, targeting 2030. That is only a few steps above what you described as true 7nm.
No in that no one knows if it will work. We know Quantum Tunnelling will hit some day, some where, some how, at some percentage.
Remember you are talking about leading edge Semi-Conductor manufacturing. Nothing like this has ever been done before.
It is a bit like telling me 5G today was possible when I was researching on first gen 3G two decades ago. If you describe to me with theory I will have properly said yes..... but it is hard to imagine how it will actually be implemented.
But yes, I agree the economics model is tough as I have been stating on various forums for years. That is part of the reason why we see Semi-conductors consolidation, like Marvell, Broadcom.
My best guess is that some time in 2026/ 28 we might have to stretch the cycle to three years instead of two. Giving more time to amortised those cost. But HyperScaler Cloud Market seems to be not limited by any R&D funding so I am actually quite optimistic we could see the current 2 year cadence all the way to 2030. Anything beyond is just too hard to predict or infer.
(3.47mm per month)/(30 * 24 * 60 * 60 seconds) = 1.33nm/second
https://youtu.be/uEMDkbF3hu0 https://youtu.be/uXu_1zXOZdY https://youtu.be/_wAeL3f3iV4
https://spectrum.ieee.org/semiconductors/devices/how-the-fat...
https://www.chu.berkeley.edu/modern-semiconductor-devices-fo...
FinFET and GAA (gate all around) are 3d transistor designs. Therefore you get impossible and purely theoretical planar numbers.
for reference "TESCAN is a leading global producer and supplier of scanning electron microscopes, focused ion beam scanning electron microscopes and micro-CT solutions."
Is Samsung and IBM stronger in structural R&D then they are at FABs?
What about Samsung or Intel? Or research labs that do smaller runs?
There was a goal. The goal became PR. Someone in management began to believe the PR, and turned it into a promise, predicated on 'and then a miracle occurs' (the engineers figure out how to do some things that haven't been done before). The engineers keep trying to explain how nobody has done this before because you can't. To do so involves violating the laws of physics or Information Theory. Anyone who cracks this problem deserves a Nobel nomination, so that probably isn't us.
Middle management is stuck in the middle because someone has made promises we can't keep, and they either make it worse or help cover it up by playing for time.
You either solve a different problem that has similar behavior (or at least, until researchers discover Meltdown), or you slowly reset expectations until people are chronically grumpy but nobody is yelling.
It's probably fairly commonplace.
On paper I don't think it's risky to say everyone is looking at GAAFETs and MBCFETs, they're the evolution of finFETs (okay, we have the fin, what about more than one fin? Okay, how about the channel is surrounded by the gate (Gate-All-Around)?) How far along is everyone to making them commercially available with good yields, ¯\_(ツ)_/¯.
I think the surprising thing to me was TSMC has thus far (as of like a month ago) been of the mind "nah, finFETs are fine". But keep in mind, that was for their 3nm node, which this isn't.
https://www.anandtech.com/show/16041/where-are-my-gaafets-ts...
TSMC has always had a conservative culture. They dont aim at x% of improvement per process node like Intel. GAA for 3nm has long been known to be not ready for 2022. They actually mentioned this in 2019. But it was only confirmed later at a conference that Anandtech picked it up. Mainstream media being an echo chamber decide to copy each other and the news spread like wild fire.
So it was only logical to push those improvements to 2nm.
I'm aware of how TSMC felt about the prospects of GAA at 3nm, and their view of Samsung's yield prospects (i.e. not great).
Sure, it's logical to push GAA to the next node if you can, but part of TSMCs style is that they didn't even confirm that they were moving past fins until earlier this year.
They don't even have twitter! (Or do they and I've been too stupid to find it? Official I mean.)
That doesn't mean that Apple is interested. At least right now. Processes also tend to be improved with time.
1.000 US$ no, but... I would not put it past Apple to make a literal system on chip. Like, one chip with everything on one die stack: CPU, GPU, RAM, cell modem, voltage regulators... the only external components would be ports and whatever cannot be reasonably expressed on a silicon die (e.g. coils for voltage regulators).
Example; Apple didn't use any 7nm EUV variant in A12/A13. While Huawei used it for their SoC. Having said that MBCFET, or more commonly known as GAA was originally scheduled for 3nm in 2022, so giving another 2 year to bake should help.
So yes, if everything were executed to absolute perfection, then we should see a 2nm Apple Silicon in 2024.
Note: While Wccftech has gotten a lot better in the recent 12 months or so, I still wouldn't put them into reliable and trusted source. It is good for rumours and entertainment, but that is about it. ( Personally I would rather not have it appear on HN )