16-bit RISC-V processor made with carbon nanotubes
arstechnica.com
arstechnica.com
I've looked into porting it to the Nintendo DS. It should be doable, but I haven't had the time to commit to it. Maybe I'll give it another look this weekend.
Some ways 32-bit, but 16-bit level performance.
I think in the end you can call it either way.
> This chapter describes the current draft proposal for the RISC-V standard compressed instruction set extension, named “C”, which reduces static and dynamic code size by adding short 16-bit instruction encodings for common operations.
This is in contrast to, say, the ARM Thumb instructions, where you can can have entirely libraries that use 16-bit instruction without ever needing a 32-bit one.
It doesn't appear that they would be any more environmentally friendly to create in the first place as silicon though.
In a field effect transistor (FET), you have a channel and a gate. The channel is a bit like a bridge which can be raised and lowered as ships travel underneath. Ideally, electrons shouldn't be able to flow between the channel and the gate (falling off the bridge), and depending on the voltage at the gate (position of the ship), the channel should range in resistance between zero (completely open; transistor is on) and infinity (completely closed; transistor is off).
In a CNTFET, the channel is replaced with a carbon nanotube. The nanotube channel is very good at keeping the current carriers (electrons) inside, and so leakage is small. Additionally, nanotubes are very good at carrying current. To use the bridge analogy, the CNTFET has a bridge that is very wide, and so allows lots of people across, and has high walls such that the people don't fall in the water or onto the ship.
Anyway I was wrong about the design. It looks like they implemented their own very simple finite state machine, but did use Clifford Wolfe's riscv-formal to specify it: https://github.com/SymbioticEDA/riscv-formal
The electrical resistance problem
In October of last year an IBM-led team of researchers reported a solution to the electrical resistance problem. In a typical configuration metal contacts are attached to the top or the sides of the CNT. The team from IBM placed the contacts at the ends of the nanotube. They also joined the nanotube to the metallic components of the integrated circuit with a molybdenum-based carbide.
Intel current top-of-the-line chips operate at a 14 nm scale and Intel plans to introduce 10 nm chips in 2017. The team from IBM built a CNT transistor that showed no increase in electrical resistance with contact lengths from 300 nm to less than 10 nm.
https://www.forbes.com/sites/kevinmurnane/2016/09/08/carbon-...> The electrical resistance problem
> In October of last year an IBM-led team of researchers reported a solution to the electrical resistance problem. In a typical configuration metal contacts are attached to the top or the sides of the CNT. The team from IBM placed the contacts at the ends of the nanotube. They also joined the nanotube to the metallic components of the integrated circuit with a molybdenum-based carbide.
> Intel current top-of-the-line chips operate at a 14 nm scale and Intel plans to introduce 10 nm chips in 2017. The team from IBM built a CNT transistor that showed no increase in electrical resistance with contact lengths from 300 nm to less than 10 nm.
Your quote is unreadable on mobile, and annoying on desktop because of scrolling.